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Ships within 48 hours · Estimated delivery Aug 9 - Aug 14
All Hypertec Legacy Modules are fully tested and warrantied under our stringent QA programme and are supplied with a non-dispute lifetime warranty
Memory Buffered memory type Unregistered (unbuffered) Internal memory 8 GB Memory form factor 204-pin SO-DIMM ECC No Memory clock speed 1600 MHz Internal memory type DDR3 Features Buffered memory type Unregistered (unbuffered) Internal memory 8 GB Memory form factor 204-pin SO-DIMM ECC No Memory clock speed 1600 MHz Internal memory type DDR3
Memory Buffered memory type Registered (buffered) Internal memory 32 GB Memory form factor 288-pin DIMM Memory ranking 2 ECC Yes Memory clock speed 2133 MHz Internal memory type DDR4 Features Buffered memory type Registered (buffered) Internal memory 32 GB Memory form factor 288-pin DIMM Memory ranking 2 ECC Yes Memory clock speed 2133 MHz Internal memory type DDR4
Memory Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 4 GB Internal memory 4 GB Memory form factor 204-pin SO-DIMM ECC No Memory clock speed 1333 MHz Internal memory type DDR3 Features Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 4 GB Internal memory 4 GB Memory form factor 204-pin SO-DIMM ECC No Memory clock speed 1333 MHz Internal memory type DDR3
registered ECC DDR4 SDRAM - DIMM 288-pin 2400 MHz ( PC4-19200 ) from Hypertec NOTE: This memory meets the memory specification requirements for reliable operation within a HP Generation 8 (or 9) se
Hypertec 256MB PC3200 (Legacy) memory module 0.25 GB 1 x 0.25 GB DDR 400 MHz DDR2 All Hypertec Legacy Modules areA Hypertec Legacy Memory Module is a module that uses no current DRAM technology and is no longer in mainstream production by OEMS and or third party suppliers. Hypertec are committed to providing a full memory upgrade landscape as part of our core product offering and as such, there may be occasions where we need to utilise professionally repurposed components. Any repurposed components are removed within a full ESD environment and then used to
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