FS75R12KT3G-INFINEON Desc this device integrates insulated gate

this device integrates insulated gate bipolar transistor technology with a freewheeling diode configuration optimized for low conduction and switching losses

Compact module footprint compatible with standard Toshiba mounting and busbar configurations

1600V peak repetitive reverse voltage (VRRM) for robust voltage margin

Compatible with standard Fuji RA-series gate drive circuits and reference designs

ATI Accurate Technology maintains dedicated inventory of Fuji IGBT modules including hard-to-find

FS75R12KT3G-INFINEON Desc this device integrates insulated gateThe Infineon FS75R12KT3G is a high performance IGBT module delivering 75 amperes at 1200 volts, engineered for demanding power electronics applications where reliability and switching efficiency are critical. Built on Infineon's proven IGBT3 chip technology, this module offers low saturation voltage, optimized switching characteristics, and robust short circuit withstand capability, making it an industry trusted solution for modern power conversion