![CDT-EH-Sn tungsten disulfide Device structure ITO/HATCN/TAPC/DBP:TCTA/4CzTPNBu:BDMAC-XT:CBP/TCTA/DCP-BP-DPAC:PPF/PPF/TmPyPB/LiF/Al [3] Color](https://cdn.shopify.com/s/files/1/0823/0287/files/CDT-EH-Sn.png?v=1718724890)
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Device structure ITO/HATCN/TAPC/DBP:TCTA/4CzTPNBu:BDMAC-XT:CBP/TCTA/DCP-BP-DPAC:PPF/PPF/TmPyPB/LiF/Al [3] Color White Max
Solvent Effect on Thermally Activated Delayed Fluorescence by 1
8% and Fill Factor Exceeding 80%
Current Efficiency 63
4-b']dithiophene with N-Bromosuccinimide in dimethylformamide
CDT-EH-Sn tungsten disulfide Device structure ITO/HATCN/TAPC/DBP:TCTA/4CzTPNBu:BDMAC-XT:CBP/TCTA/DCP-BP-DPAC:PPF/PPF/TmPyPB/LiF/Al [3] ColorSpecifications MSDS Literature and Reviews CDT EH Sn, namely 4,4 Bis(2 ethylhexyl) 2,6 bis(trimethylstannyl) 4H cyclopenta[2,1 b: 3,4 b']dithiophene, is the intermediate for the synthesis of low bandgap semiconducting polymers which are widely used in OLED, OPV and OFET devices. 4H Cyclopenta[1,2 b: 5,4 b']dithiophene (CDT) has electron rich bridged bithiophenes with a five member cyclopentadiene fused ring at its central core. General Information CAS
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