Type Dopant: P Boron Grade: Prime CZ Virgin Resistivity: 10 20 Ohm cm Thickness: 525m + 20m TTV:"> Type Dopant: P Boron Grade: Prime CZ Virgin Resistivity: 10 20 Ohm cm Thickness: 525m + 20m TTV:"> Type Dopant: P Boron Grade: Prime CZ Virgin Resistivity: 10 20 Ohm cm Thickness: 525m + 20m TTV:"> Ultra-Flat 4" Silicon Wafers Topcon charged surfaces: Portmann – samvedhasolutions.com
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Ultra-Flat 4" Silicon Wafers Topcon charged surfaces: Portmann

SKU: 57157859421

4.2
USD171.25 USD202.25

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Ships within 48 hours · Estimated delivery Oct 9 - Oct 14

Description

charged surfaces: Portmann

Available in 16 styles and many finishes

Dodecenyl Succinic Anhydride (DDSA)

longevity (approximately 20

Controlled Radius Tip

Ultra-Flat 4" Silicon Wafers Topcon charged surfaces: PortmannDESCRIPTION Ultra Flat 4" Silicon Wafer for demanding substrate studies. Can also be used as substrate for AFM or SEM samples by dicing the wafer into smaller pieces using a Scriber and the Wafer Cleaving Glass Breaking Pliers. The 4" ultra flat silicon wafer is shipped in a 4" wafer carrier. Properties for 4" (100mm) Ultra Flat Wafer: Orientation: <100> Type Dopant: P Boron Grade: Prime CZ Virgin Resistivity: 10 20 Ohm cm Thickness: 525m + 20m TTV:

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
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